TC58NYG2S0HBAI6
IC FLASH 4GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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Kioxia America, Inc. TC58NYG2S0HBAI6 leverages advanced SLC NAND Flash technology to deliver 4Gbit of non-volatile memory. This component features a parallel interface with an access time of 25 ns, enabling rapid data retrieval. The memory organization is 512M x 8, providing flexibility for various applications. The TC58NYG2S0HBAI6 operates within a supply voltage range of 1.7V to 1.95V and is designed for surface mounting in a compact 67-VFBGA package with dimensions of 6.5x8 mm. Its operating temperature range is -40°C to 85°C, suitable for demanding environments. This memory solution is commonly utilized in automotive, industrial, and consumer electronics sectors where reliable data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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