TC58NYG2S0HBAI4
IC FLASH 4GBIT PARALLEL 63TFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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Kioxia America, Inc. presents the TC58NYG2S0HBAI4, a 4Gbit NAND Flash memory component. This non-volatile memory utilizes Single-Level Cell (SLC) technology, offering robust performance and endurance. The memory organization is 512M x 8, providing efficient data handling. Designed for surface mount applications, it is housed in a compact 63-TFBGA (9x11) package. Operating within a voltage range of 1.7V to 1.95V, this component features a write cycle time of 25ns for word/page operations. The operating temperature range is specified as -40°C to 85°C (TA). This device is suitable for applications in automotive, industrial, and consumer electronics where reliable data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-TFBGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | - |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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