TC58NYG1S3HBAI4
IC FLASH 2GBIT PARALLEL 63TFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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Kioxia America, Inc. presents the TC58NYG1S3HBAI4, a 2Gbit NAND Flash memory component organized as 256M x 8. This non-volatile memory utilizes SLC technology, offering a robust solution for data storage applications. The component operates within a voltage range of 1.7V to 1.95V and features a parallel interface with a word/page write cycle time of 25ns. Packaged in a 63-TFBGA (9x11) format, it supports surface mount installation. The operating temperature range is specified from -40°C to 85°C. This memory IC is suitable for use in automotive, industrial, and consumer electronics segments demanding reliable data retention and high performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-TFBGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | - |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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