TC58NVG2S0HBAI6
IC FLASH 4GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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Kioxia America, Inc. TC58NVG2S0HBAI6 is a 4Gbit NAND Flash memory component featuring a parallel interface. This non-volatile memory offers an access time of 25 ns and a page write cycle time of 25 ns. The memory organization is 512M x 8, utilizing Single-Level Cell (SLC) technology for robust performance. Operating within a voltage supply range of 2.7V to 3.6V, this component is designed for surface mount applications and is housed in a 67-VFBGA (6.5x8) package. The operating temperature range is -40°C to 85°C. This device is suitable for applications in consumer electronics, industrial automation, and data storage systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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