TC58NVG1S3HBAI6
IC FLASH 2GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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Kioxia America, Inc. TC58NVG1S3HBAI6 is a 2Gbit NAND Flash memory component featuring a parallel interface. This non-volatile memory offers a 25 ns access time and a write cycle time of 25 ns per word/page. The memory organization is 256M x 8, and it operates with a supply voltage range of 2.7V to 3.6V. Packaged in a 67-VFBGA (6.5x8) for surface mounting, this component is designed for operation within an industrial temperature range of -40°C to 85°C. The TC58NVG1S3HBAI6 utilizes SLC (Single-Level Cell) NAND Flash technology. This component is suitable for applications in consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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