TC58NVG1S3HBAI4
IC FLASH 2GBIT PARALLEL 63TFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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The Kioxia America, Inc. TC58NVG1S3HBAI4 is a 2Gbit parallel NAND FLASH memory component. This non-volatile memory solution utilizes Single-Level Cell (SLC) technology, offering a robust and efficient option for data storage. It features a 25 ns access time and a 2.7V to 3.6V supply voltage range, making it suitable for demanding applications. The memory organization is 256M x 8, with a page write cycle time of 25 ns. This component is housed in a compact 63-TFBGA (9x11) package, designed for surface mounting. Operating within a temperature range of -40°C to 85°C, the TC58NVG1S3HBAI4 finds application in industrial control, automotive systems, and networking infrastructure where reliable and fast data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-TFBGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256M x 8 |
| Programmable | Verified |
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