TC58BYG2S0HBAI6
IC FLASH 4GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
Kioxia America, Inc. Benand™ series TC58BYG2S0HBAI6 is a 4Gbit NAND Flash memory component with a parallel interface. This non-volatile memory offers a 25 ns access time and a 25 ns write cycle time for word/page operations. The device operates with a supply voltage range of 1.7V to 1.95V and is suitable for surface mount applications. Packaged in a 67-VFBGA (6.5x8) configuration, it operates within an ambient temperature range of -40°C to 85°C. This memory solution is designed for high-density storage requirements in various industrial applications, including networking, communications, and industrial automation. The memory organization is 512M x 8.
Additional Information
Series: Benand™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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