TC58BYG1S3HBAI6
IC FLASH 2GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
Kioxia America, Inc. Benand™ TC58BYG1S3HBAI6 is a 2 Gbit NAND Flash memory device with a parallel interface. This component utilizes Single-Level Cell (SLC) technology for enhanced endurance and performance, featuring an access time of 25 ns and a page write cycle time of 25 ns. The device is organized as 256M x 8, offering a robust solution for data storage applications. Supplied in a 67-VFBGA (6.5x8 mm) package, it is designed for surface mount assembly. Operating within a temperature range of -40°C to 85°C (TA) and requiring a supply voltage of 1.7V to 1.95V, this memory is suitable for demanding applications in the automotive, industrial, and consumer electronics sectors.
Additional Information
Series: Benand™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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