TC58BYG1S3HBAI4
IC FLASH 2GBIT PARALLEL 63TFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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The Kioxia America, Inc. Benand™ series TC58BYG1S3HBAI4 is a 2Gbit NAND Flash memory component. This single-level cell (SLC) NAND Flash device offers a parallel interface and is organized as 256M x 8. The TC58BYG1S3HBAI4 is housed in a compact 63-TFBGA (9x11) package, suitable for surface mounting. It operates within a voltage range of 1.7V to 1.95V and features a word/page write cycle time of 25ns. This memory solution is designed for applications requiring high reliability and endurance, commonly found in industrial, automotive, and consumer electronics sectors. The operating temperature range is -40°C to 85°C.
Additional Information
Series: Benand™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-TFBGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | - |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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