TC58BYG0S3HBAI6
IC FLASH 1GBIT PARALLEL 67VFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
The Kioxia America, Inc. Benand™ TC58BYG0S3HBAI6 is a 1Gbit NAND Flash memory component featuring a parallel interface. This device utilizes Single-Level Cell (SLC) technology, offering an access time of 25 ns and a page write cycle time of 25 ns. The memory is organized as 128M x 8 and operates from a supply voltage range of 1.7V to 1.95V. Packaged in a 67-VFBGA (6.5x8) configuration for surface mounting, it is rated for an operating temperature range of -40°C to 85°C. This component is suitable for applications requiring robust, high-endurance non-volatile storage, often found in industrial, automotive, and communications infrastructure.
Additional Information
Series: Benand™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 67-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 67-VFBGA (6.5x8) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
TH58BVG3S0HTAI0
IC FLASH 8GBIT 48TSOP I
TC58BVG0S3HBAI4
IC FLASH 1GBIT PARALLEL 63TFBGA
TC58BVG0S3HBAI6
IC FLASH 1GBIT PARALLEL 67VFBGA
