TC58BYG0S3HBAI4
IC FLASH 1GBIT PARALLEL 63TFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
Quality Control: Learn More
Kioxia America, Inc. Benand™ Series TC58BYG0S3HBAI4 is a 1Gbit NAND Flash memory component. This non-volatile memory utilizes Single-Level Cell (SLC) technology, organized as 128M x 8. The device features a parallel interface and is housed in a compact 63-TFBGA (9x11) package, suitable for surface mount applications. Operating within a temperature range of -40°C to 85°C (TA), it requires a supply voltage of 1.7V to 1.95V. The write cycle time for a word/page is 25ns. This component is frequently integrated into industrial, automotive, and consumer electronics applications demanding reliable data storage solutions.
Additional Information
Series: Benand™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-TFBGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | - |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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