TC58BVG2S0HBAI4
IC FLASH 4GBIT PARALLEL 63TFBGAManufacturer: Kioxia America, Inc.
Categories: Memory
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The Kioxia America, Inc. TC58BVG2S0HBAI4 within the Benand™ series is a 4Gbit parallel NAND FLASH memory component. This non-volatile memory offers a 25 ns access time and a page write cycle time of 25 ns, utilizing Single-Level Cell (SLC) technology. The memory is organized as 512M x 8 and operates from a supply voltage range of 2.7V to 3.6V. Packaged in a 63-TFBGA (9x11) with surface-mount mounting type, it is designed for operation across an ambient temperature range of -40°C to 85°C. This component is suitable for applications in industrial, automotive, and consumer electronics where reliable data storage is critical.
Additional Information
Series: Benand™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 4Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND (SLC) |
| Memory Format | FLASH |
| Supplier Device Package | 63-TFBGA (9x11) |
| Write Cycle Time - Word, Page | 25ns |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Memory Organization | 512M x 8 |
| Programmable | Not Verified |
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