MMIX1Y100N120C3H1
IGBT 1200V 92A 400W SMPDManufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ MMIX1Y100N120C3H1 is a 1200 V, 92 A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 400 W. This device features a standard input type and is housed in a 24-SMPD package, a 24-PowerSMD, 21-lead surface mount configuration. Key electrical characteristics include a collector current (Ic) of 92 A, a pulsed collector current (Icm) of 440 A, and a collector-emitter saturation voltage (Vce(on)) of 3.5 V at 15 V gate-emitter voltage and 100 A collector current. The switching characteristics are defined by a gate charge of 270 nC, typical on and off delays of 48 ns and 123 ns respectively at 25°C, and switching energies of 6.5 mJ (on) and 2.9 mJ (off) under test conditions of 600 V, 100 A, 1 Ohm, and 15 V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in high-voltage power conversion, motor drives, and industrial power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 420 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 100A |
| Supplier Device Package | 24-SMPD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 48ns/123ns |
| Switching Energy | 6.5mJ (on), 2.9mJ (off) |
| Test Condition | 600V, 100A, 1Ohm, 15V |
| Gate Charge | 270 nC |
| Current - Collector (Ic) (Max) | 92 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 440 A |
| Power - Max | 400 W |
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