MMIX1X200N60B3
IGBT 600V 223A 625W SMPDManufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ MMIX1X200N60B3 is a 600V, 223A Positive Temperature Coefficient (PT) Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device offers a maximum collector power dissipation of 625W and a pulsed collector current of 1000A. Key electrical parameters include a Vce(on) of 1.7V at 15V gate drive and 100A collector current, with a typical gate charge of 315 nC. Switching characteristics at 360V, 100A, 1 Ohm, 15V show turn-on delay of 48ns and turn-off delay of 160ns, with switching energy of 2.85mJ (on) and 2.9mJ (off). The MMIX1X200N60B3 features a surface mount 24-SMPD package with 21 leads, suitable for operating temperatures from -55°C to 175°C. This component is utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
| Supplier Device Package | 24-SMPD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 48ns/160ns |
| Switching Energy | 2.85mJ (on), 2.9mJ (off) |
| Test Condition | 360V, 100A, 1Ohm, 15V |
| Gate Charge | 315 nC |
| Current - Collector (Ic) (Max) | 223 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 1000 A |
| Power - Max | 625 W |
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