MMIX1G320N60B3
IGBT PT 600V 400A 24SMPDManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ MMIX1G320N60B3 is a 600V, 400A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This PT IGBT features a high pulsed collector current capability of 1000A and a maximum power dissipation of 1000W. The surface mount package, a 24-SMPD with 21 leads, facilitates efficient thermal management. Key electrical characteristics include a low on-state voltage of 1.5V at 15V gate-emitter voltage and 100A collector current, with a collector-emitter saturation voltage of 1.5V. The gate charge is 585 nC. Switching performance is characterized by typical turn-on delay of 44ns and turn-off delay of 250ns at 25°C, with a reverse recovery time of 66ns. The operating temperature range is -55°C to 150°C. This component is suitable for use in industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 24-PowerSMD, 21 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 66 ns |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 100A |
| Supplier Device Package | 24-SMPD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 44ns/250ns |
| Switching Energy | 2.7mJ (on), 5mJ (off) |
| Test Condition | 480V, 100A, 1Ohm, 15V |
| Gate Charge | 585 nC |
| Current - Collector (Ic) (Max) | 400 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 1000 A |
| Power - Max | 1000 W |
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