Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

MMIX1G120N120A3V1

Banner
productimage

MMIX1G120N120A3V1

IGBT 1200V 220A 400W SMPD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS GenX3™ MMIX1G120N120A3V1 is a 1200V, 220A Insulated Gate Bipolar Transistor (IGBT) with a power dissipation of 400W. This PT type IGBT features a low collector-emitter saturation voltage of 2.2V at 15V gate-emitter voltage and 100A collector current. Typical switching times are 40ns turn-on and 490ns turn-off, with switching energies of 10mJ (on) and 33mJ (off) at 960V, 100A. The device boasts a high pulsed collector current of 700A and a reverse recovery time of 700ns. Packaged in a 24-SMPD (24-PowerSMD, 21 Leads) for surface mounting, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in industrial motor drives and power factor correction.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / Case24-PowerSMD, 21 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)700 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
Supplier Device Package24-SMPD
IGBT TypePT
Td (on/off) @ 25°C40ns/490ns
Switching Energy10mJ (on), 33mJ (off)
Test Condition960V, 100A, 1Ohm, 15V
Gate Charge420 nC
Current - Collector (Ic) (Max)220 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)700 A
Power - Max400 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXGA48N60A3-TRL

IXGA48N60A3 TRL

product image
IXGK120N120A3

IGBT PT 1200V 240A TO264

product image
IXGH30N60C3D1

IGBT 600V 60A 220W TO247