IXYY8N90C3
IGBT 900V 20A 125W C3 TO-252Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXYY8N90C3 is a 900V, 20A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This device features a maximum power dissipation of 125W and a collector current of 20A, with a pulsed collector current capability of 48A. The IXYY8N90C3 is designed for surface mount applications within a TO-252AA package. Key electrical characteristics include a Vce(on) of 2.5V at 15V gate-emitter voltage and 8A collector current. Switching characteristics are specified with typical on-state switching energy of 460µJ and off-state switching energy of 180µJ, with turn-on and turn-off delays of 16ns and 40ns respectively, tested under 450V, 8A, 30 Ohms, and 15V conditions. The operating temperature range is -55°C to 175°C. This component is suitable for use in power conversion and motor control applications.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 8A |
| Supplier Device Package | TO-252AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 16ns/40ns |
| Switching Energy | 460µJ (on), 180µJ (off) |
| Test Condition | 450V, 8A, 30Ohm, 15V |
| Gate Charge | 13.3 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 48 A |
| Power - Max | 125 W |
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