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IXYX50N170C

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IXYX50N170C

IGBT 1700V 178A PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS XPT™ Series IGBT, part number IXYX50N170C, is a high-performance power semiconductor device designed for demanding applications. This through-hole component features a collector-emitter breakdown voltage of 1700 V and a continuous collector current capability of 178 A, with a pulsed capability of 460 A. The device dissipates a maximum power of 1500 W and exhibits a low on-state voltage (Vce(on)) of 3.7V at 15V gate-emitter voltage and 50A collector current. Key switching characteristics include a typical turn-on delay of 20ns and turn-off delay of 180ns at 25°C, with a reverse recovery time of 44ns. The gate charge is 260 nC. This robust IGBT is suitable for power conversion systems in industries such as industrial automation, renewable energy, and electric vehicles, operating across a temperature range of -55°C to 175°C. It is supplied in a PLUS247™-3 package.

Additional Information

Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)44 ns
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
Supplier Device PackagePLUS247™-3
IGBT Type-
Td (on/off) @ 25°C20ns/180ns
Switching Energy8.7mJ (on), 5.6mJ (off)
Test Condition850V, 50A, 1Ohm, 15V
Gate Charge260 nC
Current - Collector (Ic) (Max)178 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)460 A
Power - Max1500 W

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