IXYX30N170CV1
IGBT 1700V 108A PLUS247-3Manufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™ Series IXYX30N170CV1 is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding power applications. This component features a 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 108 A, with a pulsed capability of up to 255 A. The device is optimized for switching efficiency, exhibiting low switching energies of 5.9 mJ (on) and 3.3 mJ (off) at 850 V, 30 A under specified test conditions. Its on-state voltage (Vce(on)) is a maximum of 3.7 V at 15 V gate voltage and 30 A collector current. The IXYX30N170CV1 is housed in a PLUS247™-3 package for robust thermal management and ease of mounting via the through-hole configuration. Key parameters include a gate charge of 140 nC and a reverse recovery time of 160 ns. Operating temperature range is -55°C to 175°C. This IGBT is commonly utilized in industrial motor drives, renewable energy inverters, and high-voltage power conversion systems.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 160 ns |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 30A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 28ns/150ns |
| Switching Energy | 5.9mJ (on), 3.3mJ (off) |
| Test Condition | 850V, 30A, 2.7Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 108 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 255 A |
| Power - Max | 937 W |
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