IXYX200N65B5
650V, 200A, XPT Gen5 B5 IGBT inManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYX200N65B5 is a Gen5 XPT™ Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 470A, with a pulsed capability of 1.13kA. The IGBT type is Trench Field Stop, offering improved switching performance. Key parameters include a gate charge of 790 nC and a maximum power dissipation of 1.61kW. The on-state voltage (Vce(on)) is a maximum of 1.45V at 15V gate-emitter voltage and 100A collector current. Switching energy is specified at 600µJ (on) and 3.4mJ (off) under test conditions of 300V, 100A, 1 Ohm, and 15V. The IXYX200N65B5 utilizes a standard input type and is housed in a through-hole PLUS247™-3 package. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for use in industrial motor drives and power factor correction circuits.
Additional Information
Series: Gen5 XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.45V @ 15V, 100A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 77ns/470ns |
| Switching Energy | 600µJ (on), 3.4mJ (off) |
| Test Condition | 300V, 100A, 1Ohm, 15V |
| Gate Charge | 790 nC |
| Grade | - |
| Current - Collector (Ic) (Max) | 470 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 1.13 kA |
| Power - Max | 1.61 kW |
| Qualification | - |
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