The IXYS XPT™, GenX3™ series IXYX200N65B3 is a 650V, 410A N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a maximum continuous collector current of 410A and a pulsed collector current of 1100A, with a maximum power dissipation of 1560W. It offers a low on-state voltage of 1.7V at 15V gate-emitter voltage and 100A collector current, and a low switching energy of 5mJ (on) and 4mJ (off) under specified test conditions. The IXYX200N65B3 has a gate charge of 340 nC and a reverse recovery time of 108 ns. Operating across a temperature range of -55°C to 175°C, this device is housed in a PLUS247™-3 package, suitable for through-hole mounting. The IXYX200N65B3 finds application in power factor correction, solid-state circuit breakers, and industrial motor drives.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 108 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 60ns/370ns |
| Switching Energy | 5mJ (on), 4mJ (off) |
| Test Condition | 400V, 100A, 0Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 410 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 1100 A |
| Power - Max | 1560 W |
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