The IXYS IXYX120N120B3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the XPT™, GenX3™ series. This component is designed for demanding applications requiring robust switching capabilities. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 320 A, with a pulsed capability of 800 A. The device offers a maximum power dissipation of 1500 W and a low on-state voltage of 2.2 V at 15 V gate-emitter voltage and 100 A collector current. Switching characteristics include a gate charge of 400 nC, with turn-on delay (Td(on)) of 30 ns and turn-off delay (Td(off)) of 340 ns at 25°C, under test conditions of 960V, 100A, 1Ohm, 15V. Reverse recovery time (trr) is specified at 54 ns. The IXYX120N120B3 is housed in a PLUS247™-3 package, suitable for through-hole mounting, and can operate across an extended temperature range of -55°C to 175°C. This IGBT is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 54 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/340ns |
| Switching Energy | 9.7mJ (on), 21.5mJ (off) |
| Test Condition | 960V, 100A, 1Ohm, 15V |
| Gate Charge | 400 nC |
| Current - Collector (Ic) (Max) | 320 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 800 A |
| Power - Max | 1500 W |
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