IXYX110N120B4
IGBT 1200V 110A GEN4 XPT PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS XPT™ series IXYX110N120B4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 340A, with a pulsed current rating of 800A. The PLUS247™-3 package with through-hole mounting ensures robust thermal management and reliable integration into power modules. Its GEN4 XPT PLUS technology delivers optimized switching characteristics, with turn-on and turn-off delays specified at 45ns and 390ns respectively at 25°C, and associated switching energies of 3.6mJ (on) and 3.85mJ (off) under test conditions of 600V, 50A, 2Ohm, and 15V gate drive. The low on-state voltage drop of 2.1V at 15V gate drive and 110A collector current contributes to reduced conduction losses, while the 1360W maximum power dissipation rating highlights its suitability for high-power density designs. This IGBT is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and renewable energy inverters.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 45ns/390ns |
| Switching Energy | 3.6mJ (on), 3.85mJ (off) |
| Test Condition | 600V, 50A, 2Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 340 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 800 A |
| Power - Max | 1360 W |
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