IXYX100N65B3D1
IGBT PT 650V 225A PLUS247-3Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYX100N65B3D1 is a GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This PT IGBT features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 225A, with a pulsed capability up to 460A. Its maximum power dissipation is rated at 830W. The device offers a low on-state voltage of 1.85V at 15V gate-emitter voltage and 70A collector current. Switching characteristics include a typical turn-on delay of 29ns and turn-off delay of 150ns at 25°C, with a reverse recovery time of 156ns. The IXYX100N65B3D1 utilizes the PLUS247™-3 package for through-hole mounting, suitable for demanding industrial applications such as power supplies, motor drives, and renewable energy systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 156 ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 70A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 29ns/150ns |
| Switching Energy | 1.27mJ (on), 1.37mJ (off) |
| Test Condition | 400V, 50A, 3Ohm, 15V |
| Gate Charge | 168 nC |
| Current - Collector (Ic) (Max) | 225 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 460 A |
| Power - Max | 830 W |
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