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IXYX100N120B3

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IXYX100N120B3

IGBT 1200V 188A 1150W PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYX100N120B3 is a high-performance insulated gate bipolar transistor (IGBT) from the GenX3™, XPT™ series. This PT IGBT offers a collector-emitter breakdown voltage of 1200V and a continuous collector current capability of 225A, with a pulsed current rating of 530A. Designed for robust power handling, it dissipates a maximum power of 1150W. Key electrical characteristics include a gate charge of 250 nC and a maximum on-state voltage (Vce(on)) of 2.6V at 15V gate-source voltage and 100A collector current. Switching performance is characterized by turn-on and turn-off delays of 30ns and 153ns respectively at 25°C under test conditions of 600V, 100A, 1 Ohm, and 15V. Switching energy is rated at 7.7mJ for turn-on and 7.1mJ for turn-off. The IXYX100N120B3 features a through-hole mounting type and is packaged in a TO-247-3 Variant (PLUS247™-3) for efficient thermal management. Its operating temperature range extends from -55°C to 175°C (TJ). This component is suitable for applications in industrial motor drives and power supply systems.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 100A
Supplier Device PackagePLUS247™-3
IGBT TypePT
Td (on/off) @ 25°C30ns/153ns
Switching Energy7.7mJ (on), 7.1mJ (off)
Test Condition600V, 100A, 1Ohm, 15V
Gate Charge250 nC
Current - Collector (Ic) (Max)225 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)530 A
Power - Max1150 W

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