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IXYT85N120A4HV

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IXYT85N120A4HV

IGBT PT 1200V 300A TO268HV

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYT85N120A4HV is a Trench IGBT with a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 300A (520A pulsed). This device features a low collector-emitter saturation voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 85A collector current. With a total gate charge of 200 nC and switching energies of 4.9mJ (on) and 8.3mJ (off) under specified test conditions (600V, 60A, 5 Ohm, 15V), it is designed for efficient high-power switching applications. The maximum power dissipation is 1150W, and it operates within an extended temperature range of -55°C to 175°C. Packaged in a TO-268HV (IXYT) surface-mount configuration, this component is suitable for demanding power conversion systems in industries such as industrial automation, renewable energy, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)40 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 85A
Supplier Device PackageTO-268HV (IXYT)
IGBT TypePT
Td (on/off) @ 25°C40ns/400ns
Switching Energy4.9mJ (on), 8.3mJ (off)
Test Condition600V, 60A, 5Ohm, 15V
Gate Charge200 nC
Current - Collector (Ic) (Max)300 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)520 A
Power - Max1150 W

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