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IXYT55N120A4HV

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IXYT55N120A4HV

IGBT PT 1200V 175A TO268HV

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXYT55N120A4HV is a 1200V, 175A Trench IGBT with a maximum power dissipation of 650W. This component features a standard input type and is packaged in a TO-268HV (IXYT) surface mount format. Key electrical characteristics include a collector current of 175A (350A pulsed), a gate charge of 110 nC, and a low on-state voltage of 1.8V at 15V Vge and 55A Ic. The IGBT exhibits a reverse recovery time of 35 ns and switching energies of 2.3mJ (on) and 5.3mJ (off) under test conditions of 600V, 40A, 5 Ohm, 15V. The operating temperature range is -55°C to 175°C. This device is suitable for applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 55A
Supplier Device PackageTO-268HV (IXYT)
IGBT TypePT
Td (on/off) @ 25°C23ns/300ns
Switching Energy2.3mJ (on), 5.3mJ (off)
Test Condition600V, 40A, 5Ohm, 15V
Gate Charge110 nC
Current - Collector (Ic) (Max)175 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)350 A
Power - Max650 W

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