IXYT30N65C3H1HV
IGBT PT 650V 60A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYT30N65C3H1HV is a GenX3™, XPT™ series IGBT with a 650 V collector-emitter breakdown voltage. This device features a 60 A continuous collector current (Ic) and a 118 A pulsed collector current (Icm) at a maximum power dissipation of 270 W. The IGBT type is PT with a standard input. Key switching characteristics include a gate charge of 44 nC, turn-on delay (Td(on)) of 21 ns, and turn-off delay (Td(off)) of 75 ns, both measured at 25°C, 400V, 30A, 10 Ohm, 15V. Switching energy is specified as 1 mJ on and 270 µJ off. The on-state voltage (Vce(on)) is a maximum of 2.7V at 15V gate-emitter voltage and 30A collector current. This component is housed in a TO-268AA package and supports surface mounting. Operating temperature ranges from -55°C to 175°C. Applications include power factor correction and industrial power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 120 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 21ns/75ns |
| Switching Energy | 1mJ (on), 270µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 44 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 118 A |
| Power - Max | 270 W |
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