IXYT20N120C3D1HV
IGBT 1200V 36A TO268HVManufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™, GenX3™ series Insulated Gate Bipolar Transistor (IGBT) with part number IXYT20N120C3D1HV. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current (Ic) of 36 A, with a pulsed capability (Icm) of 88 A. The IXYT20N120C3D1HV is optimized for high switching frequencies, offering typical turn-on delay (Td(on)) of 20 ns and turn-off delay (Td(off)) of 90 ns at 25°C, with a switching energy of 1.3 mJ (on) and 1 mJ (off) under test conditions of 600 V, 20 A, 10 Ohm, and 15 V. The on-state voltage drop (Vce(on)) is a maximum of 3.4 V at 15 V gate-emitter voltage and 20 A collector current. This IGBT is housed in a TO-268HV package, suitable for surface mounting, and can dissipate up to 230 W of power. It operates within an extended temperature range of -55°C to 150°C (TJ). Applications include power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 29 ns |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-268HV (IXYT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/90ns |
| Switching Energy | 1.3mJ (on), 1mJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 88 A |
| Power - Max | 230 W |