IXYT12N250CV1HV
IGBT 2500V 28A TO268HVManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYT12N250CV1HV is a high-voltage XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter voltage rating of 2500V and a continuous collector current capability of 28A, with a pulsed current rating of 80A. The device offers a maximum power dissipation of 310W and a low on-state voltage (Vce(on)) of 4.5V at 15V gate-emitter voltage and 12A collector current. Switching characteristics include a gate charge of 56 nC and a reverse recovery time (trr) of 16 ns. The IXYT12N250CV1HV is housed in a TO-268HV (IXYT) surface mount package, suitable for operation across a wide temperature range of -55°C to 175°C. This IGBT is utilized in power factor correction, industrial motor drives, and renewable energy systems.
Additional Information
Series: XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 16 ns |
| Vce(on) (Max) @ Vge, Ic | 4.5V @ 15V, 12A |
| Supplier Device Package | TO-268HV (IXYT) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 12ns/167ns |
| Switching Energy | 3.56mJ (on), 1.7mJ (off) |
| Test Condition | 1250V, 12A, 10Ohm, 15V |
| Gate Charge | 56 nC |
| Current - Collector (Ic) (Max) | 28 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 310 W |