IXYR50N120C3D1
IGBT 1200V 56A 290W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYR50N120C3D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 56 A, with a pulsed current rating of 210 A. It offers a maximum power dissipation of 290 W and a low on-state voltage (Vce(on)) of 4V at 15V gate-emitter voltage and 50A collector current. The device exhibits typical turn-on delay (Td(on)) of 28 ns and turn-off delay (Td(off)) of 133 ns at 25°C, with switching energies of 3 mJ (on) and 1 mJ (off) when tested at 600 V and 50 A. The IXYR50N120C3D1 utilizes a standard input type and is housed in an ISOPLUS247™ package, designed for through-hole mounting. This IGBT is suitable for applications in industrial power supplies, motor control, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 195 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 50A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 28ns/133ns |
| Switching Energy | 3mJ (on), 1mJ (off) |
| Test Condition | 600V, 50A, 5Ohm, 15V |
| Gate Charge | 142 nC |
| Current - Collector (Ic) (Max) | 56 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 210 A |
| Power - Max | 290 W |
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