IXYS IXYR100N65A3V1 is a high-performance N-channel insulated gate bipolar transistor (IGBT) designed for demanding power switching applications. This component is built for efficiency and reliability in various industrial sectors, including power supplies, motor drives, and renewable energy systems. Its robust construction and advanced design principles ensure optimal performance in challenging operating environments. The IXYR100N65A3V1 is supplied in a tube package, facilitating efficient integration into automated manufacturing processes. Its advanced semiconductor technology delivers excellent switching characteristics and low on-state voltage drop, contributing to reduced power loss and improved system efficiency.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | - |
| Operating Temperature | - |
| Input Type | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Supplier Device Package | - |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
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