IXYR100N120C3
IGBT 1200V 104A 484W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXYR100N120C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current (Ic) capability of 104A, with a pulsed capability (Icm) of 480A. The IXYR100N120C3 offers a maximum power dissipation of 484W and a low collector-emitter saturation voltage (Vce(on)) of 3.5V at 15V gate-emitter voltage and 100A collector current. Key switching characteristics include a gate charge of 270 nC and typical switching times of 32ns turn-on and 123ns turn-off, tested under 600V, 100A, 1 Ohm, and 15V conditions. This IGBT is housed in an ISOPLUS247™ package for efficient thermal management and is suitable for through-hole mounting. Its robust performance makes it applicable in industrial applications such as motor drives, power supplies, and uninterruptible power systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 100A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 32ns/123ns |
| Switching Energy | 6.5mJ (on), 2.9mJ (off) |
| Test Condition | 600V, 100A, 1Ohm, 15V |
| Gate Charge | 270 nC |
| Current - Collector (Ic) (Max) | 104 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 480 A |
| Power - Max | 484 W |
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