IXYQ40N65B3D1
DISC IGBT XPT-GENX3 TO-3P (3)Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXYQ40N65B3D1, a GenX3™, XPT™ series PT IGBT, offers a 650 V collector-emitter breakdown voltage and a continuous collector current of 86 A. This through-hole component is housed in a TO-3P package, suitable for applications demanding robust power handling up to 300 W. Key parameters include a 2 V saturation voltage at 15 V gate-emitter voltage and 40 A collector current, and a gate charge of 68 nC. Switching characteristics are defined by a 37 ns reverse recovery time and typical on/off delays of 20 ns/140 ns at 25°C under specific test conditions. This device finds application in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/140ns |
| Switching Energy | 800µJ (on), 700µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 68 nC |
| Current - Collector (Ic) (Max) | 86 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 195 A |
| Power - Max | 300 W |