IXYQ30N65B3D1
IGBT PT 650V 70A TO3PManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYQ30N65B3D1 is a GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This PT IGBT features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 70A, with a pulsed current rating of 160A. It offers a maximum power dissipation of 270W. Key performance parameters include a Vce(on) of 2.1V at 15V gate-source voltage and 30A collector current, a gate charge of 45nC, and a reverse recovery time of 38ns. Switching energy is rated at 830µJ (on) and 640µJ (off) under test conditions of 400V, 30A, 10 Ohm, and 15V. This component is housed in a TO-3P package and is supplied in tubes. It is suitable for use in industrial and high-voltage power conversion systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 38 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Supplier Device Package | TO-3P |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 17ns/87ns |
| Switching Energy | 830µJ (on), 640µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 45 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 270 W |
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