IXYP8N90C3
IGBT 900V 20A 125W TO220Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ IXYP8N90C3 is a 900V, 20A insulated gate bipolar transistor (IGBT) designed for high-voltage applications. This TO-220-3 packaged device offers a maximum power dissipation of 125W and features a low on-state voltage of 2.5V at 15V gate-emitter voltage and 8A collector current. Key performance parameters include a 13.3 nC gate charge and switching energies of 460µJ (on) and 180µJ (off) under typical test conditions. This component is suitable for power switching applications in industrial and consumer electronics, including power supplies, motor control, and lighting.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 8A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 16ns/40ns |
| Switching Energy | 460µJ (on), 180µJ (off) |
| Test Condition | 450V, 8A, 30Ohm, 15V |
| Gate Charge | 13.3 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 48 A |
| Power - Max | 125 W |
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