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IXYP30N65C3

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IXYP30N65C3

DISC IGBT XPT-GENX3 TO-220AB/FP

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXYP30N65C3 is a PT IGBT from the GenX3™, XPT™ series, designed for high-voltage, high-current applications. This electronic component features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 60 A, with a pulsed capability of 118 A. Its collector-emitter saturation voltage (Vce(on)) is a maximum of 2.7V at 15V gate-source voltage and 30A collector current. The device offers a maximum power dissipation of 270 W and exhibits switching times of 21ns turn-on and 75ns turn-off at 25°C, with associated switching energies of 1mJ on and 270µJ off, tested under specific conditions (400V, 30A, 10 Ohm, 15V). The gate charge is 44 nC and the reverse recovery time (trr) is 42 ns. Packaged in a TO-220-3 through-hole configuration, it operates within an extended temperature range of -55°C to 175°C. This component is suitable for power factor correction, motor drives, and uninterruptible power supply (UPS) systems.

Additional Information

Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)42 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 30A
Supplier Device PackageTO-220
IGBT TypePT
Td (on/off) @ 25°C21ns/75ns
Switching Energy1mJ (on), 270µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge44 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)118 A
Power - Max270 W

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