IXYP30N120A4
IGBT DISCRETE TO-220Manufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™, GenX4™ Series IXYP30N120A4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding switching applications. This discrete TO-220 package component offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 106 A, with a pulsed capability of 184 A. The device exhibits a maximum on-state voltage (Vce(on)) of 1.9V at 15V gate-source voltage and 25A collector current. Switching characteristics include a gate charge of 57 nC, with typical on and off switching energies of 4mJ and 3.4mJ respectively, under test conditions of 960V, 25A, 5 Ohm, and 15V. It features a standard input type and operates across a wide temperature range from -55°C to 175°C (TJ). The IXYP30N120A4 is suitable for applications in industrial power supplies, motor control, and solid-state switching.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 25A |
| Supplier Device Package | TO-220 (IXYP) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/235ns |
| Switching Energy | 4mJ (on), 3.4mJ (off) |
| Test Condition | 960V, 25A, 5Ohm, 15V |
| Gate Charge | 57 nC |
| Current - Collector (Ic) (Max) | 106 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 184 A |
| Power - Max | 500 W |
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