IXYP24N100C4
IGBT DISCRETE TO-220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYP24N100C4 is a high-performance GenX4™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This discrete power semiconductor features a collector-emitter voltage rating of 1000V and a continuous collector current capability of 76A, with a pulsed current rating of 132A. The IGBT Type is PT, and it offers a maximum power dissipation of 375W. Key switching characteristics include a gate charge of 43 nC, a reverse recovery time of 35 ns, and switching energies of 3.6mJ (on) and 1mJ (off) under test conditions of 800V, 24A, 10 Ohm, and 15V. The on-state voltage (Vce(on)) is a maximum of 2.3V at 15V gate-emitter voltage and 24A collector current. This component is packaged in a standard TO-220-3 through-hole configuration. The operating temperature range is from -55°C to 175°C (TJ). This device is commonly utilized in industrial automation, power supply, and motor control systems.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 24A |
| Supplier Device Package | TO-220 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/147ns |
| Switching Energy | 3.6mJ (on), 1mJ (off) |
| Test Condition | 800V, 24A, 10Ohm, 15V |
| Gate Charge | 43 nC |
| Current - Collector (Ic) (Max) | 76 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 132 A |
| Power - Max | 375 W |
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