IXYP24N100A4
IGBT DISCRETE TO-220Manufacturer: IXYS
Categories: Single IGBTs
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IXYS XPT™, GenX4™ series IXYP24N100A4 is a Power Transistor (PT) IGBT with a collector-emitter breakdown voltage of 1000 V. This through-hole TO-220 packaged device offers a continuous collector current (Ic) of 85 A and a pulsed collector current (Icm) of 145 A. It features a maximum power dissipation of 375 W and a gate charge of 44 nC. The on-state collector-emitter voltage (Vce(on)) is a maximum of 1.9 V at 15 V gate-emitter voltage and 24 A collector current. Switching characteristics include turn-on delay (Td(on)) of 13 ns and turn-off delay (Td(off)) of 216 ns at 25°C, with switching energy values of 3.5 mJ (on) and 2.3 mJ (off) under test conditions of 800 V, 24 A, 10 Ohm, and 15 V. The reverse recovery time (trr) is 47 ns. This component is suitable for high-power switching applications across various industries. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 47 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 24A |
| Supplier Device Package | TO-220 (IXYP) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 13ns/216ns |
| Switching Energy | 3.5mJ (on), 2.3mJ (off) |
| Test Condition | 800V, 24A, 10Ohm, 15V |
| Gate Charge | 44 nC |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 145 A |
| Power - Max | 375 W |
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