IXYP20N65C3D1M
IGBT 650V 18A 50W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYP20N65C3D1M is a GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This device features a 650V collector-emitter breakdown voltage and a continuous collector current rating of 18A, with a pulsed capability of 105A. The low on-state voltage of 2.5V at 20A (Vge 15V) and a maximum power dissipation of 50W contribute to efficient operation. Switching characteristics include a gate charge of 30 nC, a reverse recovery time of 30 ns, and switching energies of 430µJ (on) and 350µJ (off) under test conditions of 400V, 20A, 20 Ohm, and 15V. The IGBT is housed in a standard TO-220-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This component is suitable for use in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 19ns/80ns |
| Switching Energy | 430µJ (on), 350µJ (off) |
| Test Condition | 400V, 20A, 20Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 50 W |
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