IXYP20N65C3D1
IGBT 650V 18A 50W TO220Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXYP20N65C3D1 is a GenX3™, XPT™ series Trench IGBT with a 650V collector-emitter breakdown voltage. This device features a 2.5V maximum Vce(on) at 15V gate-emitter voltage and 20A collector current, with a 20A continuous collector current capability and a 50A maximum collector current. The IGBT type is PT with a 50W power dissipation rating in a TO-220-3 package. Key performance parameters include a gate charge of 30 nC, switching energy of 430µJ (on) and 350µJ (off), and typical turn-on/turn-off delays of 19ns/80ns respectively, tested at 400V, 20A, 20 Ohm, and 15V. The operating temperature range is -55°C to 175°C. This component is suitable for applications in power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 135 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 19ns/80ns |
| Switching Energy | 430µJ (on), 350µJ (off) |
| Test Condition | 400V, 20A, 20Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
IXXH50N60B3D1
IGBT 600V 120A 600W TO247
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXYK120N120C3
IGBT 1200V 240A 1500W TO264
