IXYP20N65C3
DISC IGBT XPT-GENX3 TO-220AB/FPManufacturer: IXYS
Categories: Single IGBTs
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IXYS presents the IXYP20N65C3, a high-performance discrete IGBT designed for demanding power applications. This component features a robust 650V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a pulsed current rating (Icm) of 105A. The IXYP20N65C3 offers a maximum power dissipation of 200W and a typical gate charge of 30 nC, facilitating efficient switching. Its operating temperature range extends from -55°C to 175°C (TJ), ensuring reliability in harsh environments. This device is suitable for use in industrial power supplies, motor control, and renewable energy systems. The component is supplied in a TO-220AB/FP package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | - |
| Reverse Recovery Time (trr) | 135 ns |
| Vce(on) (Max) @ Vge, Ic | - |
| Supplier Device Package | - |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 200 W |
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