IXYP20N65B3D1
IGBT PT 650V 58A TO220Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXYP20N65B3D1 is a 650V, 58A XPT™, GenX3™ series IGBT designed for high-performance power switching applications. This PT IGBT features a low collector-emitter saturation voltage of 2.1V at 15V gate-emitter voltage and 20A collector current, with a maximum continuous collector current of 58A and a pulsed collector current of 108A. The component offers a maximum power dissipation of 230W and a typical gate charge of 29 nC, facilitating efficient switching with turn-on and turn-off delays of 12ns and 103ns respectively, at 25°C under test conditions of 400V, 20A, 20 Ohm, and 15V. Switching energy is rated at 500µJ (on) and 450µJ (off). Packaged in a TO-220-3 through-hole configuration, the IXYP20N65B3D1 operates within an extended temperature range of -55°C to 175°C. This device is suitable for use in industrial motor control, power supplies, and renewable energy systems.
Additional Information
Series: XPT™, GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Supplier Device Package | TO-220 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 12ns/103ns |
| Switching Energy | 500µJ (on), 450µJ (off) |
| Test Condition | 400V, 20A, 20Ohm, 15V |
| Gate Charge | 29 nC |
| Current - Collector (Ic) (Max) | 58 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 108 A |
| Power - Max | 230 W |
Request a Quote
Clients Also Buy
IXYN120N120C3
IGBT MOD 1200V 240A SOT227B
IXYN82N120C3
IGBT MOD 1200V 105A 500W SOT227B
IXXN200N60B3
IGBT MOD 600V 280A 940W SOT227B
