IXYP20N120C4
IGBT DISCRETE TO-220Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXYP20N120C4 is a high-performance XPT™, GenX4™ series IGBT with a collector-emitter breakdown voltage of 1200 V. This discrete power semiconductor features a continuous collector current capability of 68 A and a pulsed collector current of 120 A. The device is rated for a maximum power dissipation of 375 W and offers a low on-state voltage (Vce(on)) of 2.5 V at 15 V gate-source voltage and 20 A collector current. Key switching characteristics include a gate charge of 44 nC, turn-on delay (Td(on)) of 14 ns, and turn-off delay (Td(off)) of 160 ns at 25°C, with switching energies of 4.4 mJ (on) and 1 mJ (off) under specified test conditions. The IXYP20N120C4 is packaged in a TO-220-3 through-hole configuration, suitable for applications in power supplies, motor control, and industrial automation. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 53 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-220 (IXYP) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 14ns/160ns |
| Switching Energy | 4.4mJ (on), 1mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 44 nC |
| Current - Collector (Ic) (Max) | 68 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 375 W |
Request a Quote
Clients Also Buy
IXXH80N65B4D1
IGBT PT 650V 180A TO247AD
IXYK140N120A4
IGBT 140A 1200V TO264
IXYN110N120A4
IGBT PT 1200V 275A SOT227B
