IXYP20N120C3
IGBT 1200V 40A 278W TO-220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYP20N120C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series, designed for demanding applications. This TO-220-3 packaged device offers a 1200 V collector-emitter breakdown voltage and a continuous collector current of 40 A, with a pulsed capability of 96 A. It features a maximum power dissipation of 278 W and a low on-state voltage of 3.4 V at 15 V gate drive and 20 A collector current. Switching characteristics are rated at 1.3 mJ (on) and 500 µJ (off) under typical test conditions of 600 V, 20 A, 10 Ohm, and 15 V gate. The gate charge is specified at 53 nC. Operating across a wide temperature range of -55°C to 175°C, this through-hole component is suited for power conversion, industrial motor control, and high-voltage switching applications.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/90ns |
| Switching Energy | 1.3mJ (on), 500µJ (off) |
| Test Condition | 600V, 20A, 10Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 278 W |
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