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IXYP20N120B4

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IXYP20N120B4

IGBT DISCRETE TO-220

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXYP20N120B4 is a high-performance XPT™, GenX4™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This discrete IGBT offers a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 76 A, with a pulsed current rating of 130 A. It dissipates up to 375 W of power and features a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 20 A collector current. With a typical gate charge of 44 nC and switching times of 15 ns turn-on and 200 ns turn-off at 25°C (tested under 960V, 20A, 10 Ohm, 15V conditions), this device ensures efficient switching. The IXYP20N120B4 also exhibits a reverse recovery time of 47 ns. It is housed in a standard TO-220-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This component is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

Additional Information

Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)47 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 20A
Supplier Device PackageTO-220 (IXYP)
IGBT Type-
Td (on/off) @ 25°C15ns/200ns
Switching Energy3.9mJ (on), 1.6mJ (off)
Test Condition960V, 20A, 10Ohm, 15V
Gate Charge44 nC
Current - Collector (Ic) (Max)76 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)130 A
Power - Max375 W

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