IXYP20N120A4
IGBT DISCRETE TO-220Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXYP20N120A4 is a high-performance XPT™, GenX4™ series IGBT designed for demanding power applications. This discrete IGBT features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 135 A. It offers a maximum power dissipation of 375 W and a low on-state voltage of 1.9 V at 15 V gate-emitter voltage and 20 A collector current. The device exhibits excellent switching characteristics with typical turn-on delay of 12 ns and turn-off delay of 275 ns at 25°C, along with a reverse recovery time of 54 ns. Gate charge is rated at 46 nC. The IXYP20N120A4 is housed in a standard TO-220-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This component is suitable for applications in industrial motor drives, power supplies, and electric vehicle charging systems.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 54 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 20A |
| Supplier Device Package | TO-220 (IXYP) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 12ns/275ns |
| Switching Energy | 3.6mJ (on), 2.75mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 46 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 135 A |
| Power - Max | 375 W |
Request a Quote
Clients Also Buy
IXXH80N65B4D1
IGBT PT 650V 180A TO247AD
IXYK140N120A4
IGBT 140A 1200V TO264
IXYN110N120A4
IGBT PT 1200V 275A SOT227B
