IXYP15N65C3D1M
IGBT 650V 16A 48W TO-220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™, XPT™ series IXYP15N65C3D1M is a 650V, 16A N-channel enhancement mode insulated gate bipolar transistor (IGBT) designed for high-efficiency power switching applications. This PT IGBT features a robust TO-220-3 through-hole package, delivering a continuous collector current of 16A and a pulsed collector current of 80A. With a maximum power dissipation of 48W and a low on-state voltage (Vce(on)) of 2.5V at 15V/15A, it offers excellent conduction characteristics. Switching performance is further optimized with specified switching energies of 270µJ (on) and 230µJ (off) at 400V, 15A, 20 Ohm, 15V, and typical turn-on/off delays of 15ns/68ns. Its extended operating temperature range of -55°C to 175°C (TJ) makes it suitable for demanding industrial environments, including power supplies, motor control, and industrial automation.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/68ns |
| Switching Energy | 270µJ (on), 230µJ (off) |
| Test Condition | 400V, 15A, 20Ohm, 15V |
| Gate Charge | 19 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 48 W |
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