IXYP15N65C3D1
IGBT 650V 38A 200W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXYP15N65C3D1 is a GenX3™, XPT™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT IGBT offers a 650V collector-emitter breakdown voltage and a continuous collector current capability of 38A (80A pulsed). With a maximum power dissipation of 200W and a low on-state voltage of 2.5V at 15V gate-emitter voltage and 15A collector current, it ensures efficient power switching. The device features a gate charge of 19 nC and exhibits switching energies of 270µJ (on) and 230µJ (off) under specified test conditions. Its TO-220-3 package facilitates through-hole mounting, and it operates across a wide temperature range from -55°C to 175°C. This component is well-suited for use in industrial motor drives, power factor correction circuits, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/68ns |
| Switching Energy | 270µJ (on), 230µJ (off) |
| Test Condition | 400V, 15A, 20Ohm, 15V |
| Gate Charge | 19 nC |
| Current - Collector (Ic) (Max) | 38 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 200 W |
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